Fig. 5: Simulation results of the Si avalanche-induced trapping memory (ATM).
From: All-silicon non-volatile optical memory based on photon avalanche-induced trapping
a Simulated doping concentration distributions of the Si P-N junction with 0 cm−2 and 5 × 1012 cm−2 trapped defect density. b Transverse electric (TE) mode energy distribution inside the Si P-N junction waveguide. c Simulated effective index change (purple) and loss change (orange) of the Si P-N junction waveguide versus trapped defect density. Corresponding d resonant wavelength change, e Q factor (purple) and extinction ratio change (orange) of the Si microring resonator memory versus trapped defect density, where the ⋆ indicates the measured results from the programmed Si optical memory.
