Table 1 Survey of recent non-volatile optical memories
From: All-silicon non-volatile optical memory based on photon avalanche-induced trapping
Reference | C RÃos48 | Z. Fang49 | J. G-Kremer50 | K. Taki51 | S. Cheung22 | B. Tossoun52 | this work |
|---|---|---|---|---|---|---|---|
Technology | PCM | PCM | Ferroelectric | Ferroelectric | Flash | Memristor | ATM |
Material stack | Sb2Se3 | Sb2Se3/Graphene | BaTiO3/Si | HfZrO/Al2O3/Si | GaAs/Al2O3/HfO2/Al2O3/HfO2/Al2O3/Si | GaAs/Al2O3/Si | Si |
Structure | Ring | Ring | Ring | MZI | Ring | Ring | Ring |
Max λ shift | 114 pm | 21 pm | 72 pm | 33 nm | 41 pm | 70 pm | 71 pm |
Program voltage (V) | +6.2 | +3 | +5 ~ +12 | +200 | +9 | +5 | −8 |
Erase voltage (V) | +21 | +5 | −5 ~ −12 | irreversible | −5 | −4 | +1 |
Switch speed | 1000/0.8 μs | 220/0.4 μs | 1 ms | 10 ~ 100 s | 1 s | 1 ns | 1500/300 s |
Switch power (W) | 7.7 × 10−2/2.2 × 10−1 | < 1.4 × 10−2 | 4.6 × 10−9 | 6 × 10−8 | 1.8 × 10−10 | 5 × 10−4/4 × 10−4 | 8 × 10−4* /1.5 × 10−4 |
Loss (dB) | 0.36 | 0.33 | 0.07 | N/A | 0.5 | 0.27 | 0.2 ~ 0.6 |
Non-volatile states | 5 | 2 | 8 | 2 | 4 | 3 | 26 |
Retention time (h) | N/A | N/A | 12 | 2.7 | 336 | 12 | > 24 |
Cycles | 125 | > 1000 | 300 | 1 | 100 | 1000 | 100 |
Available in SiPh foundry | ✗ | ✗ | ✗ | ✗ | ✗ | ✗ | ✓ |
