Fig. 2: Single-charge tunneling in S (only)-doped, and Zn (only)-doped tunnel field effect transistor (TFET). | Communications Physics

Fig. 2: Single-charge tunneling in S (only)-doped, and Zn (only)-doped tunnel field effect transistor (TFET).

From: Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon

Fig. 2

a Intensity plot of dISD/dVSD versus (VSD, VG) for a TFET with only S doped at T = 10 K. b Similar plot at 300 K. c Energy band diagram showing the two-step tunneling transport through a single S dopant (two levels) existing in the I part (channel) of the p-type intrinsic n-type PIN structure. d, e Similar plots for a TFET with only Zn doped at temperatures of 10 and 300 K. f Schematic of single-charge transport through a single Zn dopant (two levels). The ranges of color intensity scale G (pS) for plots (a, b, d, e) are 50, 50, 500, and 500, respectively. VSD source–drain voltage, VG gate voltage, ISD source–drain current, T temperature.

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