Fig. 4: Room temperature zero-B structures in S/Zn-codoped tunnel field effect transistors (TFETs). | Communications Physics

Fig. 4: Room temperature zero-B structures in S/Zn-codoped tunnel field effect transistors (TFETs).

From: Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon

Fig. 4

a B dependence of ISD for another S/Zn TFET. The inset presents the details at ~0.6 mT. b B dependence of ISD for another S/Zn TFET. The inset shows the details of a zero-B structure. The average results of 1000 repeated measurements are shown in (a, b). c Summary of room-temperature zero-B structures. The dip widths obtained for the eight S/Zn-codoped TFETs (circles) and peak envelope widths obtained for the five S/Zn-codoped TFETs (squares) are plotted against their zero-B ISD values. The solid line represents the reference for linear correlation. The dashed line indicates the peak envelope width for the estimated nuclear fluctuation of 26 mT. ISD source–drain current, T temperature, B magnetic field.

Back to article page