Fig. 1: Schematics of workflow.
From: Realistic behavioral model for ReRAMs capturing non-idealities
Two completely different types of memristors, i.e., vacuum-processed SDC and inkjet-printed ECM memristors, are characterized through electrical measurements. The experimental data serves as input to extract device characteristics parameters, which are used to complete the technology-specific MemSim+ model. The comprehensive technology-specific model can simulate device non-idealities, including D2D and C2C variations, as well as the resistance drift effect. The technology-specific MemSim+ model is validated by comparing the simulated device behavior with the experimental data of the respective memristor. The validated MemSim+ models are used to simulate stateful logic. The circuit’s performance based on different technologies can be directly compared through output distribution, considering device behavioral non-idealities.
