Fig. 2: Data comparison between experiments and MemSim+ model of two memristor technologies.
From: Realistic behavioral model for ReRAMs capturing non-idealities
a Combined SET/RESET cycles for 26 SDC devices, each undergoing 100 cycles. b Combined SET/RESET cycles for 8 ECM devices, each undergoing 50 cycles. c Combined threshold voltages of 23 SDC devices, selected 20 measurements per device at the end of the forming. d Combined threshold voltages of 8 SDC devices, 20 measurements per device at the end of the hysteresis curve. e Average resistance drifts in LRS and HRS of 26 SDC devices. f Average resistance drifts in HRS of 8 ECM devices.
