Table 1 Parameters used in MemSim+ model and their corresponding nominal values of SDC and ECM memristors

R_off

Resistance at HRS.

180 kΩ

1933.15 Ω

R_on

Resistance at LRS.

13.9079 kΩ

174 Ω

v_off

SET threshold voltage.

0.34 V

1.56 V

v_on

RESET threshold voltage.

−0.2145 V

−0.39 V

k_off

Coefficient of state change rate during SET.

12.4 mm s⁻¹

121.7 mm s⁻¹

k_on

Coefficient of state change rate during RESET.

−2.3 mm s⁻¹

− 7.6 mm s⁻¹

θ_off

Coefficient of resistance drift after SET

705.433 ms⁻¹

0

θ_on

Coefficient of resistance drift after RESET

1013.65 ms⁻¹

410.25 ms⁻¹

τ

Drift fade-out time constant

5 s

50 s

α_off

Degree of (non-)linearity for SET.

2

2

α_on

Degree of (non-)linearity for RESET.

2

2

\({w}_{\max }\)

Value of state variable at LRS.

3 nm

3 nm

\({w}_{\min }\)

Value of state variable at HRS.

0 nm

0 nm