Fig. 2: Transmission electron microscopy study of NbN layers grown under different conditions.
From: NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxy
STEM images of NbN layers grown under N-rich (a) and In-rich (b) conditions with corresponding HRTEM images in (c) and (d), respectively. The yellow boxes indicate the size of NbN grains: 10 nm for N-rich and 30 nm for In-rich conditions. The insets in Figs. (c) and (d) show an FFT of the single-grain region marked with the yellow boxes in these images. All images are taken along the \([11\overline{2}0]\) GaN zone axis. Schematic representation of the atomic structure at NbN grain boundary for N-rich (e) and In-rich (f) conditions.
