Fig. 1: SGM at 77 K.
From: Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy
a Graphical representation of a Scanning Gate Microscopy experiment. The light blue section corresponds to the exposed semiconducting region of the nanoflag. b Conductance modulation of device SC6 versus back gate voltage. The back gate working point Vbg = 3 V is indicated by a red x. The numerical least squares fit of the rising slope in proximity to the working point with a linear model is indicated by the red dashed line. c Conductance map as a function of tip position acquired in lift-mode with a 60 nm tip offset with respect to the topography scan. Working point: Vtip = 10 V, Vbg = 3 V. d Conductance map acquired in the same conditions as (c), but with Vtip = −10 V. In (c) and (d), the device outline is indicated by the dashed yellow lines.
