Fig. 2: Device characterization at 300 mK.
From: Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy
a Scanning Electron Microscopy (SEM) image of device SGM1 D8D2. The scale bar corresponds to 1 μm b Critical current as a function of back gate voltage. The green line indicates the position of the working point Vbg = 9.5 V. The red line shows to the best linear fit of the critical current modulation by the back gate in the neighborhood of the working point. c Current-voltage curve of the device at Vbg = 20 V. d Differential resistance map as a function of back gate voltage and current bias.
