Table 2 Numerical values of the model parameters used in the simulations of the InSb nanoflags
From: Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy
Parameter | Value |
|---|---|
Δ | 300 μeV |
\({{\mathcal{U}}}\) | 45 meV |
Vdis | 30 meV |
c | 6.25 meV V−1 |
Vth | 0.5 V |