Fig. 2: Optical properties and defect state analysis of IGZO thin films under LV and HV conditions. | Communications Materials

Fig. 2: Optical properties and defect state analysis of IGZO thin films under LV and HV conditions.

From: Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

Fig. 2

Spectroscopic ellipsometry (SE) spectra of the dielectric function (ε2), deconvoluted into two distinct band edge states: D1 (shallow) and D2 (relatively deep), for IGZO thin films deposited under (a) LV and (b) HV conditions. c Infrared spectra of LV and HV IGZO thin films. d Schematic energy band diagram of the defect states in IGZO thin films deposited under LV and HV conditions.

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