Fig. 3: Transistor characteristics and stability of IGZO TFTs with and without Al-EIL under LV and HV conditions. | Communications Materials

Fig. 3: Transistor characteristics and stability of IGZO TFTs with and without Al-EIL under LV and HV conditions.

From: Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

Fig. 3

Transfer characteristics and extracted field effect mobility of (a) LV and (b) HV IGZO TFTs. c Comparison of transfer characteristics for Al-EIL devices with LV and HV active layers. ΔVTH values under (d) NBTS, (e) PBTS, and (f) NBTIS conditions over 3600 seconds.

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