Fig. 3: Transistor characteristics and stability of IGZO TFTs with and without Al-EIL under LV and HV conditions. | Communications Materials

Fig. 3: Transistor characteristics and stability of IGZO TFTs with and without Al-EIL under LV and HV conditions.

From: Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

Fig. 3: Transistor characteristics and stability of IGZO TFTs with and without Al-EIL under LV and HV conditions.The alternative text for this image may have been generated using AI.

Transfer characteristics and extracted field effect mobility of (a) LV and (b) HV IGZO TFTs. c Comparison of transfer characteristics for Al-EIL devices with LV and HV active layers. ΔVTH values under (d) NBTS, (e) PBTS, and (f) NBTIS conditions over 3600 seconds.

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