Fig. 4: Theoretical analysis of hydrogen-related defect states in IGZO thin films. | Communications Materials

Fig. 4: Theoretical analysis of hydrogen-related defect states in IGZO thin films.

From: Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

Fig. 4

Density of states (DOS) for (a) \({{{{\rm{H}}}}}_{{{{\rm{O}}}}}^{+}\) and (b) \({({{{\rm{H}}}}-{{{\rm{DX}}}})}^{-}\) models. In (b), the trap level is fully occupied with two electrons. c The charge density distribution of the trap state in (b). d Transition levels of three different substitutional H defects in IGZO. The values of \(\varepsilon (+/-)\) are referenced to the conduction band minimum.

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