Table 1 Extracted transfer parameters of the reference and EIL IGZO TFTs deposited by LV and HV conditions

From: Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

TFT

µFE (cm2/Vs)

S.S. (V/dec)

Vth (V)

Ion/Ioff

LV IGZO TFTs

9.67 ± 1.36

0.19 ± 0.08

1.32 ± 0.79

~ 108

EIL LV IGZO TFTs

57.98 ± 5.01

0.18 ± 0.06

0.94 ± 0.82

~ 109

HV IGZO TFTs

13.8 ± 1.26

0.15 ± 0.05

1.63 ± 0.39

~ 108

EIL HV IGZO TFTs

118.24 ± 7.39

0.11 ± 0.03

1.29 ± 0.37

~ 109

Back to article page