Fig. 1: Device schematic and HAADF-STEM and elemental analysis of device interface. | Communications Materials

Fig. 1: Device schematic and HAADF-STEM and elemental analysis of device interface.

From: Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Fig. 1: Device schematic and HAADF-STEM and elemental analysis of device interface.

a Schematic of the MnAl2S4/MoS2 2D FET. b A top-view optical image of the device taken by an optical microscope. The yellow rectangle indicates the location of the FIB cut, as shown in (c) for the HAADF-STEM, EDS, and TEM analyses. d The HAADF-STEM of the MnAl2S4/MoS2 interface. e The HAADF-STEM of the vertically stacked MnAl2S4/MoS2/Ni/Cr heterostructure on a SiO2/Si substrate from the area labeled in the red rectangle, and the corresponding EDS elemental map shows the distribution of Mn, Al, S, Mo, S, Ni, and Cr.

Back to article page