Fig. 6: BTI analyses under different stress time, temperature, and comparison with 2D-FET technologies. | Communications Materials

Fig. 6: BTI analyses under different stress time, temperature, and comparison with 2D-FET technologies.

From: Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Fig. 6: BTI analyses under different stress time, temperature, and comparison with 2D-FET technologies.

a Evolution of the ID-VG characteristics under PBTI stress measured for TG and b corresponding recovery traces for increasing stress biases, similarly c and d for the BG device. PBTI measured at T = 0, 25, 100, and 125 °C under (e) ts = 1 s and under (f) ts = 10ks were measured for the TG device at stress bias of VG,stress = 2 V. g Comparison of the absolute normalized PBTI measured on various 2D-FET technologies at vacuum: 1, ref. 62; 2, ref. 63; 3, ref. 64; 4, ref. 63; 5, ref. 65; 6, ref. 66; 7, ref. 67; 8, ref. 37; 9, ref. 66; 10, ref. 61. * The SiO2/ReS2 FET devices is passivated with α-MoO3.

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