Extended Data Fig. 2: Thin film morphology of p4VP deposited with and without a vapor solvent. | Nature Synthesis

Extended Data Fig. 2: Thin film morphology of p4VP deposited with and without a vapor solvent.

From: Engineering solvation in initiated chemical vapour deposition for control over polymerization kinetics and material properties

Extended Data Fig. 2: Thin film morphology of p4VP deposited with and without a vapor solvent.The alternative text for this image may have been generated using AI.

(a) and (b) Optical images of Si wafers coated by p4VP thin films, deposited at (a) P4VP = 417 mTorr (with Pmonomer/Psat = 1.01), and (b) P4VP = 208 mTorr and PHFIP = 208 mTorr (with Pmonomer/Psat = 0.21). The DR and Mn were 18.8 nm min-1 and 27.5 kDa, respectively for the film shown on the left, and 20.4 nm min-1 and 44 kDa, respectively for the film shown on the right. (c) Atomic force microscopy (AFM) images of p4VP thin films deposited using Ar (left) and different PHFIP (the three panels on the right); (d) and (e) Scanning electron microscope (SEM) images of 200-nm p4VP thin films deposited on Si wafer in the presence of Ar (b) or HFIP (c).

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