Fig. 5: Mechanical modeling of nanosheet deformation.
From: Mapping of the mechanical response in Si/SiGe nanosheet device geometries
Cross-sectional schematic of the amplified deformation induced a near the edge of a 1000 nm wide and b 50 nm wide Si/SiGe nanosheets as predicted by boundary element method (BEM) mechanical modeling. Two regimes of elastic relaxation are separated by the vertical dotted lines: region I corresponds to the lateral elastic relaxation due to the presence of the traction-free nanosheet sidewalls, and region II to the vertical load sharing between the Si and SiGe regions.
