Table 2 Peak parameters of spectral fit.

From: Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

pi (eV; nm)

FWHM (meV)

Ai

Defect candidate

 

1.58; 784

164

0.11

(C–C)’, (Ci)C, (C–C)

VB

1.66; 748

93

0.17

(C–C)’, (Ci)C, (C–C)

CB

1.84; 674

108

0.37

Ni=Ni

VB

1.92; 646

88

0.37

Ni=Ni

VB

2.04; 609

104

0.45

(Ci)C, (C–C)

CB

2.13; 582

104

0.64

(Ci)C, (C–C)

CB

2.34; 531

172

0.87

Ni=Ci

VB

2.42; 512

76

0.62

Ni

CB

2.55; 487

143

1.00

(C–C)’, (C–C)

VB

2.79; 444

168

0.34

(C–C)’, (C–C)

VB

  1. Defect candidates are taken from Deák et al. 46 and Devynck et al. 47. A comparison of the associated CTLs can be found in Fig. 1d. The associated charge carrier reservoirs with which the radiative recombination occurs are indicated.
Back to article page