Fig. 2: Magnetic memory (MRAM) characterization overview.
From: Weighted spin torque nano-oscillator system for neuromorphic computing
a Resistance versus magnetic field transfer curves of elliptical MRAMs (75 nm x 225 nm). The magnetic field (H) was kept at −22 Oe to compensate for the magnetic field offset during the weighted spin torque nano-oscillators characterization. These curves were obtained at a bias current of 10 µA. b Switching probability overview of an elliptical MRAM (100 nm x 200 nm) from parallel to anti-parallel state as a function of the pulse voltage and magnetic field amplitude applied to the field line (VFL and HFL). Each point is the result of 100 switching attempts with a single pulse of a few nanosecond length. A single 30 pJ pulse of 1 ns length is able to switch the MRAM from parallel (P) to anti-parallel (AP) state with a probability of 100%.
