Fig. 7: Device-to-device variability of memristors employing quasi-2D amorphous carbon bilayers as the ion-transport media.
From: Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
a Mapping of both the averaged Vset (left frame) and Vreset (right frame) of 32 Pt/quasi-2D amorphous carbon bilayer/Ag memristors in a 4 by 8 array (Color scale changes from green to blue corresponding to the change of voltage from 0.4 V to -0.2 V. Orange: failed devices without reliable resistive switching behavior.) b Histogram for the spatial distributions of Vset and Vreset shown in (a). Histograms showing the distribution of the standard deviation of Vset (c) and Vreset (d) extracted from 30 devices. Histograms showing the distribution of their low-resistance state (LRS) resistance (RLRS, e) and high-resistance state (HRS) resistance (RHRS, f) averaged over 25 cycles. Red dotted lines are Gaussian fits to the data. g Cumulative probability distribution of RLRS (black squares) and RHRS (blue circles) based on multiple switch cycles performed on multiple devices. The red dotted lines serve as a visual guide to mark an on/off ratio of at least 200 in the worst-case scenario. h SEM micrograph showing a failed device caused by the delamination of the Ag top electrode.
