Fig. 8: Speed, multilevel switching, rendition, endurance, and benchmark of memristors employing quasi-2D amorphous carbon bilayers as the ion-transport media.
From: Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
a Switching of the memristor with a 100 ns/1 V voltage set pulse to extract the set time (tset). The voltage pulse is shown in black in the left axis and the response current is shown in red in the right axis. b Read current (red, right axis) contrast of the memristor under the 10 µs/50 mV read voltage pulse (black, left axis) before (dashed lines) and after (solid lines) the set transaction shown in (a). c The multilevel switching of a Pt/quasi-2D amorphous carbon bilayer/Ag memristor with a sequence of 10 µs/0.35 V set pulses followed by 10 µs/50 mV read pulses. The voltage pulse is shown in black in the left axis and the response current is shown in red in the right axis. d Retention of these intermediate conductance states measured at room temperature. Different colors represent different resistance levels. e Endurance test showing >104 cycles of stable operations between the HRS (black) and LRS (red) in ambient. f Change of the resistance of HRS (black) and LRS (red) as a function of time, measured at room temperature (RT, solid) and 85 oC (hollow), respectively. g Memristive switching characteristics of two devices after 18 months storage (red) as compared with what was obtained right after completing the device fabrication (black). h Benchmarking operational set (VSet) and reset (VReset) voltages and the associated standard deviations (σ) of memristors built on various 2D/3D materials. i The switching speed in terms of set time (tSet) and the associated energy consumption to perform the write operation to these memristors.
