Fig. 3: Processed silicon carbide-on-insulator wafer and devices.
Figure reproduced from ref. 16. a A process 4” silicon carbide-on-insulator wafer with various resonator designs, some of them have backside openings in the silicon handle layer, which can be seen through from the transparent silicon carbide device layer on top. b Bird view scanning electron microscopy showing the 3 mm silicon carbide disk resonant gyroscope. c, a Zoomed-in view of the decoupling network at the resonator center. d Details of the capacitive trench between the electrode and the resonator, taken by cleaving off one of the adjacent electrodes. e Cross-section view of the deep reactive iron etched trench profile, taken by dicing through the resonator; the microscopy is colored to show different layers, and the buried oxide SiO2 layer is removed during the releasing process.
