Table 1 Comparison of Cu-Cu bonding

From: Thermal stability enhancement of low temperature Cu-Cu bonding using metal passivation technology for advanced electronic packaging

Candidates

Cu-Cu10,11,12,13,33,44,45,46

Nanocrystalline Cu20,21,47

Nano-twin22,23,24,48,49,50,51,52

Passivation25,26,27,28

Scheme

W2W / D2D

D2W / D2D

W2W / D2D

W2W / D2D

Bonding temperature

250 °C

300 °C

150 °C

R.T.

70 °C

Bonding duration

3 min

10–40 min

60 min

50 min

1 min

Post annealing

w/o

w/o

w/o

100 °C (10–60 min)

w/o

Pad (<3 um)

N/A

N/A

N/A

N/A

available

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