Fig. 2: Growth techniques for van der Waals semiconductors in the In–Ga–Se system.
From: Indium selenides for next-generation low-power computing devices
a–d, Representative synthesis methods for indium selenide thin films: chemical exfoliation (CE) (panel a), powder-based chemical vapour deposition (CVD) (panel b), metal–organic chemical vapour deposition (MOCVD) (panel c) and molecular beam epitaxy (MBE)80 (panel d). e,f, Growth temperature dependence of grain or exfoliated crystal size (panel e) and lateral growth rate (panel f), summarized from reports on mechanical exfoliation (ME), CE, CVD74,76,151,152,153,154,155, chemical vapour transport (CVT)75, MBE80 and MOCVD11. ME and CVD data are shown with green and yellow shading. g, Thickness-dependent field-effect mobility of InSe and In₂Se₃ thin films mainly grown by CVD; MOCVD and CE are labelled, and ME samples are shown as open squares with InSe highlighted in green11,74,76,151,152,153,154,155. CMOS BEOL, complementary metal-oxide-semiconductor back-end-of-line; EPC, electronic pressure controller; MFC, mass flow controller; THA⁺, tetrahexylammonium cation. Part d adapted with permission from ref. 80, ACS.
