Table 1 Stacking of different heterostructures with their corresponding nomenclatures

From: Significant influence of low SOC materials on magnetization dynamics and spin-orbital to charge conversion

Stacking

Nomenclature

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (4 nm)/CuOx (3 nm)

WCF1

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (6 nm)/ CuOx (3 nm)

WCF2

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (8 nm)/ CuOx (3 nm)

WCF3

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (10 nm)/ CuOx (3 nm)

WCF4

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (4 nm)/C60 (25 nm)

WCFO1

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (6 nm)/C60 (25 nm)

WCFO2

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (8 nm)/C60 (25 nm)

WCFO3

Si/SiO2 (300 nm)/β-W (10 nm)/CFB (10 nm)/C60 (25 nm)

WCFO4

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