Fig. 9: Spin-LEDs based on a bilayer structure.
a Schematic illustration of a spin LED device. using 2D chiral perovskite (R- or S-MBA)2PbI4 as spin filtering, non-chiral CsPbI3 nanocrystals as light-emitting layer; spin-polarized holes are injected at the interface. bPCP-EL of the CISS layer/mixed halide perovskite NC heterostructure. c The same 2D perovskite acts as a spin filter, allowing only spin-polarized holes (blue circles) to move through the LED and recombine in the AlGaInP multiple quantum well emitting CP-EL (yellow helix). d Circularly polarized transient absorbance determines the spin lifetime of carriers in the AlGaInP multiple quantum well. e DOCP of the CISS layer/Multiple quantum well structure. [a, b are adapted from ref. 21, c–e are adapted from ref. 119. with permission].
