Fig. 5: High-temperature TPV system performance.
From: Non-Hermitian selective thermal emitter for thermophotovoltaics
a An image of the NHE-GaSb TPV system operating at elevated emitter temperature (1173 K). b Measured I–V curves from the GaSb cell when the emitter is heated from 295 K to 1173 K. c Output electrical power generated for different emitter temperatures. d The η values were calculated at different temperatures using the extracted dark current value from PV-cell characterization (red) and theoretically predicted dark current value (blue).
