Fig. 14: Application of perovskite NWs in photodetectors.
From: Halide Perovskite Nanostructures: Processing Methods and Optoelectronics Applications
a The variation of photodetector responsivity with light intensity. b The variation of photodetector EQE and detection rate with light intensity. c, d Responsivity and detection rate of devices with different PEA+ contents e Schematic illustration of the fabrication process of MAPbI3 NWs and GaAs-MAPbI3 NWs. f Schematic diagram of the channel current transport mechanism of a photodetector based on CdS@CdxZn1-xS QDs modification under illumination. g Photodetector responsivity and EQE. h Energy level diagram of the PIO heterojunction and schematic illustration of the photoinduced charge generation mechanism. i Schematic diagram of the fabrication process of MAPbI3 QW/NW arrays. a, b Reproduced with permission from ref. 184. Copyright 2021, John Wiley and Sons; c, d Reproduced with permission from ref. 185. Copyright 2020, John Wiley and Sons; e Reproduced with permission from ref. 186. Copyright 2022, Springer Nature; f, g Reproduced with permission from ref. 187. Copyright 2022, Royal Society of Chemistry; h Reproduced with permission from ref. 178. Copyright 2021, John Wiley and Sons; i Reproduced with permission from ref. 188. Copyright 2022, American Chemical Society.
