Fig. 5: Simulation results for the mode profile of an AlN microresonator with a thin Si3N4 layer on top.
From: Simplified aluminum nitride processing for low-loss integrated photonics and nonlinear optics
The mode profile is plotted for a wavelength of 1546 nm. The Si3N4 layer thickness is changed between 10 nm to 100 nm (top to bottom). The change in Si3N4 layer thickness has no significant impact on the mode profile.
