Fig. 2: Indirect excitation of SiV− centers in a diamond at the edge of a thin Si3N4 membrane. | npj Nanophotonics

Fig. 2: Indirect excitation of SiV− centers in a diamond at the edge of a thin Si3N4 membrane.

From: Substrate-assisted cathodoluminescence

Fig. 2: Indirect excitation of SiV− centers in a diamond at the edge of a thin Si3N4 membrane.

a Schematic of the experimental geometry: an electron beam impinges on the bulk part of substrate, generating BSEs (orange trajectories) that excite CL of SiV centers in a diamond placed on a 5 nm Si3N4 membrane. b SE image of the sample, showing the diamond on the Si3N4 membrane region (left) and the bulk Si support frame (right). c CL intensity maps recorded at beam energies from 30 keV to 5 keV. Note the logarithmic colormap scaling (pixel size 500 × 500 nm2, exposure time 1 s).

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