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Transistor-type optoelectronic sensors from light intensity detection to multifunctional perception

Nature Sensors volume 1, pages 209–221 (2026)Cite this article

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Abstract

Transistor-type optoelectronic sensors (OESs), which integrate transistor architectures with photodetection, have become an important platform for advancing optoelectronic sensing technologies. Their electrical tunability and structural versatility enable programmable mapping between optical inputs and electrical outputs, extending sensing capabilities beyond those of conventional two-terminal devices. These attributes position transistor-type OESs as promising candidates for in-sensor signal encoding and computing. Recent developments have shown a clear evolution from basic light intensity detection towards multifunctional perception, with advantages in edge extraction, machine vision and high-dimensional photodetection. This Review surveys the operating principles, device architectures and gate-tunable photoresponses that underpin this class of sensors. Progress at the interface of bioinspired design and intelligent algorithms is highlighted, illustrating how transistor-type OESs are being shaped into platforms that are capable of complex, adaptive functionality. The key challenges and opportunities that may guide the future development of transistor-type OESs are then outlined.

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Fig. 1: Transistor-type OESs and their functional capabilities.
Fig. 2: Gate-tunable performance metrics and modulation strategies of transistor-type OESs.
Fig. 3: Device architectures and performance summary of transistor-type OESs.
Fig. 4: Transistor-type OESs enabled by bioinspired designs.
Fig. 5: Transistor-type OESs for high-dimensional photodetection.
Fig. 6: Transistor-type OESs for integrating sensing, memory and computing.

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Acknowledgements

C.-W.Q. acknowledges the financial support by the Ministry of Education, Republic of Singapore (grant numbers A-8002152-00-00, A-8002458-00-00 and A-8003643-00-00) and the Competitive Research Program Award (NRF-CRP26-2021-0004 and NRF-CRP30-2023-0003) from the National Research Foundation, Prime Minister’s Office, Singapore. We acknowledge the financial support by the Singapore National Research foundation (NRF-CRP31-0001, NRF2023-ITC004-001 and NRF-MSG-2023-0002) and the CAS Project for Young Scientists in Basic Research (grant number YSBR-113).

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  1. These authors contributed equally: Jintao Fu, Hao Jiang, Xingsi Liu.

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore

    Jintao Fu, Xingsi Liu, Xinyun Zhu, Kah-Wee Ang & Cheng-Wei Qiu

  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore

    Hao Jiang & Weibo Gao

  3. Department of Physics, National University of Singapore, Singapore, Singapore

    Cheng-Wei Qiu

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C.-W.Q. and J.F. conceived the idea and supervised the overall project. J.F. wrote the manuscript with the help of H.J. and X.L. Writing guidance was provided by H.J., X.L., X.Z., K.-W.A., W.G. and C.-W.Q. All authors contributed to the review of the manuscript.

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Fu, J., Jiang, H., Liu, X. et al. Transistor-type optoelectronic sensors from light intensity detection to multifunctional perception. Nat. Sens. 1, 209–221 (2026). https://doi.org/10.1038/s44460-026-00035-1

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