Figure 5 | Scientific Reports

Figure 5

From: Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Figure 5

Gate and temperature tunable linear magnetoresistance (LMR).

The LMR, ΔRxx/Rxx(B = 0T) and the corresponding Rxy as functions of magnetic field B at (a,b) Vg = −60 V and (c,d) Vg = 60 V measured at various temperatures (ranging from 1.4 K to 200 K), respectively; (e) The gate voltage dependence of the extracted LMR slope (k, extracted between 3 T and 6 T) at different temperatures; (f) The LMR slope (k) vs T for different gate voltages. Inset shows k vs np (in log-log scale) at different temperatures for np values shown in Fig. 3c (one band p-type carriers). Gray band indicates a power law with exponent −1 (k ~ np−1). The data for T = 200 K can be fitted by ~np−2.

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