Figure 4
C-V curve of the InGaN/GaN heterostructure MOSFET at 300 K under dark condition with scan frequency of 1 MHz.
Inset: microscopic image of a fabricated MOSFET device.
Figure 4 | Scientific Reports
C-V curve of the InGaN/GaN heterostructure MOSFET at 300 K under dark condition with scan frequency of 1 MHz.
Inset: microscopic image of a fabricated MOSFET device.
