Table 1 Layer details of the Al0.2Ga0.8As X-ray-photodiode.
Layer | Material | Thickness (μm) | Dopant | Dopant Type | Doping density (cm−3) |
|---|---|---|---|---|---|
1 | Ti | 0.02 | |||
2 | Au | 0.2 | |||
3 | GaAs | 0.01 | Be | p+ | 1 × 1019 |
4 | Al0.2Ga0.8As | 0.5 | Be | p+ | 2 × 1018 |
5 | Al0.2Ga0.8As | 3 | undoped | <1015 | |
6 | Al0.2Ga0.8As | 1 | Si | n+ | 2 × 1018 |
7 | Substrate n+ GaAs | ||||
8 | Au | 0.2 | |||
9 | InGe | 0.02 |
