Bismuth-based compounds are known for their exceptional electronic properties, yet the potential of low-dimensional group V-Bi materials remains largely unexplored. Here, the authors experimentally realize a 2D BiAs layer with giant Rashba spin splitting, revealing its potential for next-generation spintronic devices and field-effect transistors through advanced characterization techniques.
- Sandra Benter
- Renan Da Paixao Maciel
- Anders Mikkelsen