Josephson junctions, essential for qubits in quantum computing, require improved NbN growth processes. Here, the authors employ plasma-assisted molecular beam epitaxy under indium-rich conditions to enhance the structural and electrical quality of cubic δ-NbN on GaN substrates, achieving high critical current densities and enabling integration with III-N compounds.
- Artur Lachowski
- Paweł Wolny
- Czesław Skierbiszewski
