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Researchers developed a simple, industry-compatible method using an indium buffer layer between cobalt and 2D materials to form vdWs tunnel contacts. This achieved high spin injection efficiency in both graphene and MoS2, enabling future large-scale spintronic devices.

Ferromagnetic semiconductors that have the critical properties of semiconductors and ferromagnetism at room temperature have so far proven elusive. Here, by doping black phosphorus with Cobalt, Fu, Qu, Hou, Chang and coauthors induce ferromagnetism that persists up to room temperature, all while maintaining black phosphorus’ semiconducting properties.

Graphene is known to display unique functional properties due to its two-dimensional structure. Here, the authors measure the thermal conductivity of suspended graphene as a function of sample length, finding that thermal conductivity is higher in longer samples as a result of two-dimensional phonons.

Ultrathin black phosphorus is a two-dimensional semiconductor with a finite band gap, unlike graphene, but it is known to degrade upon exposure to air. Here, the authors show that passivating few-layer samples of this material in an inert gas environment greatly improves the n-type charge transport.

Exotic electron dynamics called snake states are predicted along a p–n junction in graphene. Taychatanapat et al. now demonstrate that such snake states can manifest themselves through oscillatory conductance across the junction, revealing their twisting nature.

Here, authors report spin transport in dual-gated, high-mobility bilayer graphene spin valves. Their comparative study suggests that substrate and contacts are not the key limiting sources for spin relaxation, but rather it pinpoints the role of polymer residues in current devices. Spin transport in bilayer graphene is gate tunable and this allows authors to demonstrate the evidence of magnetic moments which act as spin hot spots. By taking the advantage of their novel device architecture, they demonstrate the complete suppression of the spin signal while a transport gap was induced in these spin valve devices.

Graphene may be set to revolutionize electronics, but its small spin–orbit coupling limits its potential in spintronics. It is now shown, however, that adding hydrogen atoms can greatly enhance the magnetic properties of graphene. This then enabled the observation of the spin Hall effect, essential for controlling spin currents.

Spin–orbit coupling in graphene is small, which makes controlling spin currents in this otherwise useful spintronic material difficult. Avsar et al.now demonstrate that combining graphene with few-layer tungsten disulphide increases its spin–orbit coupling by three orders of magnitude

The authors study spin transport anisotropy in a 5.5 nm black phosphorus ribbon encapsulated by boron nitride.

Graphene films with electrical and optical characteristics superior to indium tin oxide are produced in a roll-to-roll process and used to construct devices with flexible touch-screen panels.

Manipulating spin currents in graphene by the spin–orbit interaction is important for many technological developments. Here, the authors show that the presence of residual metallic adatoms in chemical vapour deposition graphene enhances its spin–orbit coupling by three orders of magnitude.

The injection, transport and manipulation of spins using electric fields in ultrathin films of black phosphorus show the potential of this material as a platform for two-dimensional semiconductor spintronics devices.

Plasmonic tunnel junctions integrated with a monolayer semiconductor are found to emit photons with energies exceeding the input electrical potential. This peculiar phenomenon is ascribed to being triggered by inelastic electron tunnelling dipoles inducing optically forbidden transitions in the carrier injection electrode.

The synthesis of surprisingly stable, free-standing single layers of amorphous carbon and their analysis by atomic-resolution imaging could settle a debate about their atomic arrangement and offer unusual electronics applications.

Black phosphorus is a graphene-like material that can be harnessed for two-dimensional electronic devices. Here, Xiang et al. demonstrate that adding caesium carbonate or molybdenum trioxide can significantly enhance the electron or hole conduction, respectively, of this promising material.