In this research, we utilize unique cone-shaped structure of crystalline n-ZnO semiconductor, fabricated by controlled wet etching conditions to realize near to bio-synapse size (~20–40 nm) electronic synapse device. The comprehensive “synaptic plasticity behavior” was realized in the device via homogeneous oxygen vacancies accumulation and relaxation states such as paired-pulse facilitation (PPF), short-term plasticity (STP) to long-term plasticity (LTP) memory transition, and important “learning-experience” synaptic functioning.
- Andrey Sergeevich Sokolov
- Yu-Rim Jeon
- Changhwan Choi