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Enhanced ultra-low-frequency interlayer shear modes in folded graphene layers

Few-layer graphene offers a number of attractive electronic properties, but studying shear modes via Raman is hampered by low vibrational energy and low signal strength. Here, the authors are able to detect enhanced shear modes, via suitable folding of the sample, allowing their full characterization.

Chunxiao Cong
Ting Yu
Research14 Aug 2014
Nature Communications

Volume: 5, P: 1-7
High drain field impact ionization transistors as ideal switches

Yuan et al. report a nearly vertical subthreshold swing field-effect transistor consists of a graphene/silicon heterojunction drain and a silicon channel. The device enables nearly hysteresis-free transistors with subthreshold swing of 16 µV dec⁻¹, and a complementary logic inverter with gain of 311.

Baowei Yuan
Zhibo Chen
Ye Lu
ResearchOpen Access19 Oct 2024
Nature Communications

Volume: 15, P: 1-8
Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

The growth of high-quality graphene directly on to dielectric substrates is of key importance for future electronic and optoelectronic applications. Here, the authors use silane-catalysed chemical vapour deposition to fabricate large graphene sheets, up to 20 μm in size, on hexagonal boron nitride.

Shujie Tang
Haomin Wang
Mianheng Jiang
ResearchOpen Access11 Mar 2015
Nature Communications

Volume: 6, P: 1-7
Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

Graphene nanoribbons are promising candidates for 2D material electrical interconnects; however, the top-down fabrication of nanoribbons has remained a challenge. Here, Chenet al. have used a hexagonal boron nitride template to grow narrow, integrated graphene nanoribbons with small bandgaps.

Lingxiu Chen
Li He
Mianheng Jiang
ResearchOpen Access09 Mar 2017
Nature Communications

Volume: 8, P: 1-6
Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS₂ transistors

An in situ multistep edge-contact process is developed for MoS₂ transistors, achieving quasi-non-volatile capacitorless two-transistor dynamic random-access memory with 5-bit accuracy and nanosecond write speeds.

Saifei Gou
Yuxuan Zhu
Wenzhong Bao
Research14 Jan 2026
Nature Materials

Volume: 25, P: 747-754
Moiré collective vibrations in atomically thin van der Waals superlattices

Here, the authors demonstrate moiré collective vibrations, the mechanical counterparts of moiré excitons, at heterointerfaces of twisted tungsten diselenide/tungsten disulfide heterobilayers.

Lijia Li
Jiajun Chen
Chunxiao Cong
ResearchOpen Access02 May 2025
Nature Communications

Volume: 16, P: 1-10
Dichroic spin–valley photocurrent in monolayer molybdenum disulphide

Valleytronic materials allow for band structure minima to be exploited in electronic transport devices in addition to charge and spin. Here, the authors demonstrate selective control of spin–valley-coupled photocurrents via circularly polarized light in molybdenum disulphide grown by chemical vapour deposition.

Mustafa Eginligil
Bingchen Cao
Ting Yu
ResearchOpen Access02 Jul 2015
Nature Communications

Volume: 6, P: 1-7
Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe₂

Parviz Hajiyev
Chunxiao Cong
Ting Yu
ResearchOpen Access05 Sept 2013
Scientific Reports

Volume: 3, P: 1-6
Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM

Chunxiao Cong
Kun Li
Ting Yu
ResearchOpen Access01 Feb 2013
Scientific Reports

Volume: 3, P: 1-6
Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe₈₂B₁₈ alloy and N₂ as reactants.

Zhiyuan Shi
Xiujun Wang
Xiaoming Xie
ResearchOpen Access12 Feb 2020
Nature Communications

Volume: 11, P: 1-8
Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers

Two-dimensional materials have recently emerged as interesting materials for optoelectronic applications. Here, Shang et al. demonstrate two-dimensional semiconductor activated vertical-cavity surface-emitting lasers where both the gain material and the lasing characteristics are two-dimensional.

Jingzhi Shang
Chunxiao Cong
Ting Yu
ResearchOpen Access14 Sept 2017
Nature Communications

Volume: 8, P: 1-7
RNase1-driven ALK-activation is an oncogenic driver and therapeutic target in non-small cell lung cancer

Zhengyu Zha
Chunxiao Liu
Mien-Chie Hung
ResearchOpen Access18 Apr 2025
Signal Transduction and Targeted Therapy

Volume: 10, P: 1-13
PRR15 deficiency facilitates malignant progression by mediating PI3K/Akt signaling and predicts clinical prognosis in triple-negative rather than non-triple-negative breast cancer

Fengzhu Guo
Jialu Ma
Binghe Xu
ResearchOpen Access18 Apr 2023
Cell Death & Disease

Volume: 14, P: 1-14
In-situ artificial retina with all-in-one reconfigurable photomemristor networks

Yichen Cai
Yizhou Jiang
Laigui Hu
ResearchOpen Access10 Jul 2023
npj Flexible Electronics

Volume: 7, P: 1-9
Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses

Yichen Cai
Jialong Zhang
Laigui Hu
ResearchOpen Access18 Mar 2022
npj Flexible Electronics

Volume: 6, P: 1-9
Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials – A general bond polarizability model

Xin Luo
Xin Lu
Su Ying Quek
ResearchOpen Access15 Oct 2015
Scientific Reports

Volume: 5, P: 1-13

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