Dielectric materials with both high dielectric constant and wide bandgap are sought after for the miniaturization of 2D transistors. Here, the authors report the characterization of dielectric KBe2BO3F2 nanosheets with a band gap of > 8 eV and a bulk dielectric constant of 63, showing their application for the realization of high-performance 2D MoS2 transistors.
- Yongshan Xu
- Kailang Liu
- Tianyou Zhai
