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Showing 1–16 of 16 results
Advanced filters: Author: Dmitri B. Strukov Clear advanced filters
  • Nanoscale devices have now been made that mimic biological connections in the brain by responding to the relative timing of signals. This achievement might lead to the construction of artificial neural networks for computing applications.

    • Dmitri B. Strukov
    News & Views
    Nature
    Volume: 476, P: 403-405
  • Scaling up of memristive passive crossbar circuits is the key challenge for applications in neuromorphic computing. Choi et al. demonstrate a wafer-scale fabrication of memristive passive crossbar circuits using a co-design approach for memristors and crossbar structures, enabling a device yield of over 95%.

    • Sanghyeon Choi
    • Sai Sukruth Bezugam
    • Dmitri B. Strukov
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-13
  • Current specialized function gradient computing hardware is not scalable to common higher-order functions. This work reports an approach for massively parallel gradient calculations of high-degree polynomials. Solving a Boolean satisfiability problem was experimentally implemented on an in-memory computing circuit.

    • Tinish Bhattacharya
    • George H. Hutchinson
    • Dmitri B. Strukov
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-11
  • Experimental demonstration of memristor circuits in artificial neural networks is challenging. Here, pattern classification by a single-layer perceptron network is realised with a memristive crossbar circuit, and both in situ and ex situtraining are applied.

    • Fabien Alibart
    • Elham Zamanidoost
    • Dmitri B. Strukov
    Research
    Nature Communications
    Volume: 4, P: 1-7
  • There are three fundamental passive circuit elements, resistors, capacitors, and inductors, but it was reasoned that there should be a fourth fundamental element, called a memristor, which has until now not been realized in a physical system. A fresh analysis of the concept shows that memristance arises naturally in nanoscale systems where solid state electronic and ionic transport are coupled under an external bias voltage.

    • Dmitri B. Strukov
    • Gregory S. Snider
    • R. Stanley Williams
    Research
    Nature
    Volume: 453, P: 80-83
  • Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.

    • Dmitri B. Strukov
    News & Views
    Nature Materials
    Volume: 17, P: 293-295
  • Understanding the resistive switching mechanism in oxide-based memories is an ongoing challenge. Here, the authors isolate an unintentional interfacial layer as the origin of resistive switching in Pt/Nb:SrTiO3junctions, and show that suitable processing can remove this unwanted contribution.

    • Evgeny Mikheev
    • Brian D. Hoskins
    • Susanne Stemmer
    ResearchOpen Access
    Nature Communications
    Volume: 5, P: 1-9
  • High-density information storage calls for the development of modern electronics with multiple stacking architectures that increase the complexity of three-dimensional interconnectivity. Here, Wu et al. build a stacked yet flexible artificial synapse network using layer-by-layer solution processing.

    • Chaoxing Wu
    • Tae Whan Kim
    • J. Joshua Yang
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-9
  • Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.

    • Brian D. Hoskins
    • Gina C. Adam
    • Jabez J. McClelland
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-11
  • This Review looks at recent progress in the development and understanding of memristive devices, and examines the performance requirements for computing with such devices.

    • J. Joshua Yang
    • Dmitri B. Strukov
    • Duncan R. Stewart
    Reviews
    Nature Nanotechnology
    Volume: 8, P: 13-24