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Showing 1–17 of 17 results
Advanced filters: Author: Dongxia Si Clear advanced filters

  • The integration of high-κ dielectrics with low equivalent oxide thickness (EOT) is crucial for the development of 2D transistors. Here, the authors report the low-temperature fabrication of wafer-scale HfO2 dielectric films with sub-5-Å EOT and their application for the realization of high-performance 2D MoS2 transistors and circuits.

    • Songge Zhang
    • Tao Zhang
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 17, P: 1-10

  • While water-splitting electrocatalysts enable energy storage in carbon-neutral fuels, a recent challenge has been the discovery and understanding of catalyst active sites. Here, authors find domain boundaries in MoS2 materials to present high-activity, stable, and scalable sites for H2 evolution.

    • Jianqi Zhu
    • Zhi-Chang Wang
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 10, P: 1-7

  • Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS2 homostructures that enables continuous change in their indirect bandgap, Moiré phonons and electrical properties.

    • Mengzhou Liao
    • Zheng Wei
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 11, P: 1-8

  • Via Raman and infrared spectroscopy measurements, X. Zan et al. find that rhombohedral ABC trilayer graphene has stronger electron/infrared-phonon coupling than Bernal ABA trilayer graphene.

    • Xiaozhou Zan
    • Xiangdong Guo
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-6

  • The epitaxial growth of large-area single-domain graphene on hexagonal boron nitride by plasma-assisted deposition is now reported. New sets of Dirac points are produced as a result of a trigonal superlattice potential, while Dirac fermion physics near the original Dirac point remain unperturbed. This growth approach could enable band engineering in graphene through epitaxy on different substrates.

    • Wei Yang
    • Guorui Chen
    • Guangyu Zhang
    Research
    Nature Materials
    Volume: 12, P: 792-797

  • Functional devices based on sliding ferroelectrics remain elusive. This work demonstrates the rewritable, non-volatile memory devices at room-temperature with two-dimensional sliding ferroelectric rhombohedral-stacked bilayer MoS2. The device shows overall good performance and can be made flexible.

    • Xiuzhen Li
    • Biao Qin
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-10

  • The application of 2D MoS2 flexible integrated circuits (ICs) is currently limited by the material quality over large areas and the device fabrication technology. Here the authors report a gate-first fabrication technique to realize wafer-scale monolayer MoS2 ICs on rigid and flexible substrates with high performance and low power consumption.

    • Jian Tang
    • Qinqin Wang
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-8

  • The authors report experimental evidence of phonon Stark effect in 2H-MoS2 bilayers. A Stark phonon appears as the interlayer excitons are tuned to resonate with the LA phonon emission line, and shows a linear energy shift upon application of an out-of-plane electric field.

    • Zhiheng Huang
    • Yunfei Bai
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-9

  • 2D MoS2 is being intensively investigated as a promising candidate to extend the downscaling of electronic devices. Here, the authors report a buffer-layer-control method for the growth of wafer-scale single-crystalline MoS2 monolayers on industry-compatible sapphire substrates with competitive optical and electronic properties.

    • Lu Li
    • Qinqin Wang
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-9

  • Chinese vegetable production accounts for 1.7% of the global harvest area of crops but uses 7.8% of the chemical fertilizer and produces 6.6% of the crop-sourced greenhouse gas emissions of the global agricultural sector. An innovative management programme offers opportunities for producing more vegetables with lower environmental impacts.

    • Xiaozhong Wang
    • Zhengxia Dou
    • Xinping Chen
    Research
    Nature Food
    Volume: 2, P: 47-53

  • It is believed that the strengthening of metals by formation of nanoscale grains or coherent twin boundaries is limited to a maximum strength. Here, using experiment and theory, it is shown that the fabrication of nanocrystalline-nanotwinned Ag with trace Cu results in a hardness beyond this limit.

    • Xing Ke
    • Jianchao Ye
    • Frederic Sansoz
    Research
    Nature Materials
    Volume: 18, P: 1207-1214

  • Placing two Bernal-stacked graphene bilayers on top of each other with a small twist angle gives correlated states. As the band structure can be tuned by an electric field, this platform is a more varied setting to study correlated electrons.

    • Cheng Shen
    • Yanbang Chu
    • Guangyu Zhang
    Research
    Nature Physics
    Volume: 16, P: 520-525