Arrays of thin-film transistors can be fabricated on the 5-inch wafer scale using solution-based processing of molybdenum disulfide and sodium-embedded alumina inks for the semiconductor and gate dielectric, respectively, yielding devices with room-temperature mobilities of up to 80 cm2 V−1 s−1.
- Yonghyun Albert Kwon
- Jihyun Kim
- Jeong Ho Cho
