It is a challenge to optimize vertical NAND (V-NAND) flash memory for physical unclonable function (PUF) applications. Here, the authors present a method for generating PUF data using gate-induced-drain-leakage erase, improving reliability of V-NAND flash memory-based PUFs and adding concealable characteristics.
- Sung-Ho Park
- Ryun-Han Koo
- Jong-Ho Lee
