Nature Search

A subthermionic tunnel field-effect transistor with an atomically thin channel

A new type of device, the band-to-band tunnel transistor, which has atomically thin molybdenum disulfide as the active channel, operates in a fundamentally different way from a conventional silicon (MOSFET) transistor; it has turn-on characteristics and low-power operation that are better than those of state-of-the-art MOSFETs or any tunnelling transistor reported so far.

Deblina Sarkar
Xuejun Xie
Kaustav Banerjee
Research30 Sept 2015
Nature

Volume: 526, P: 91-95
Publisher Correction: The future transistors

Wei Cao
Huiming Bu
Kaustav Banerjee
Amendments and Corrections05 Sept 2023
Nature

Volume: 621, P: E43
Author Correction: Is negative capacitance FET a steep-slope logic switch?

Wei Cao
Kaustav Banerjee
Amendments and CorrectionsOpen Access24 Feb 2020
Nature Communications

Volume: 11, P: 1
Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling

A simulation framework for three-dimensionally structured transistors based on two-dimensional materials shows that they could be used to continue complementary metal–oxide–semiconductor scaling with performance and energy enhancements.

Arnab Pal
Tanmay Chavan
Kaustav Banerjee
Research16 Dec 2024
Nature Electronics

Volume: 7, P: 1147-1157
An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs

The most successful commercial implementations of neuromorphic computing circuits are limited to digital-CMOS-circuit based approaches to date. Along this line, Pal et al. improve the energy efficiency by two orders of magnitude using two-dimensional layered material-based tunnel-field-effect transistors.

Arnab Pal
Zichun Chai
Kaustav Banerjee
ResearchOpen Access22 Apr 2024
Nature Communications

Volume: 15, P: 1-10
Intimate contacts

High electrical contact resistance had stalled the promised performance of two-dimensional layered devices. Low-resistance metal–semiconductor contacts are now obtained by interfacing semiconducting MoS₂ layers with the metallic phase of this material.

Debdeep Jena
Kaustav Banerjee
Grace Huili Xing
News & Views20 Nov 2014
Nature Materials

Volume: 13, P: 1076-1078
Is negative capacitance FET a steep-slope logic switch?

Negative Capacitance field-effect-transistor has long been touted as a steep-slope logic switch. Here, the authors present a lucid formulation that reveals the intrinsic limitation of NC-FETs in achieving steep-slope switching characteristics and highlights their more practical role in saving the voltage losses in modern FETs.

Wei Cao
Kaustav Banerjee
ResearchOpen Access10 Jan 2020
Nature Communications

Volume: 11, P: 1-8
On-chip intercalated-graphene inductors for next-generation radio frequency electronics

On-chip inductors made from intercalated multilayer graphene can offer both small form-factors and high inductance values, without comprising performance, making them potentially suitable for the development of ultra-compact wireless communication systems.

Jiahao Kang
Yuji Matsumoto
Kaustav Banerjee
Research08 Jan 2018
Nature Electronics

Volume: 1, P: 46-51
Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry

Metal cations can form coordination complexes with the lone pair electrons of 2D metal chalcogenides, offering a potentially general strategy to surface functionalization.

Sidong Lei
Xifan Wang
Pulickel Ajayan
Research01 Feb 2016
Nature Nanotechnology

Volume: 11, P: 465-471
Sampling design and estimation procedure for energy audit and carbon footprints for onion crop in India

Kaustav Aditya
Bharti
S. A. Venu
ResearchOpen Access10 Nov 2025
Scientific Reports

Volume: 15, P: 1-11
Designing artificial 2D crystals with site and size controlled quantum dots

Xuejun Xie
Jiahao Kang
Kaustav Banerjee
ResearchOpen Access30 Aug 2017
Scientific Reports

Volume: 7, P: 1-7
Inhibition of NF-kappa B pathway leads to deregulation of epithelial–mesenchymal transition and neural invasion in pancreatic cancer

Alice Nomura
Kaustav Majumder
Ashok K Saluja
Research24 Oct 2016
Laboratory Investigation

Volume: 96, P: 1268-1278
Defect and strain engineering of monolayer WSe₂ enables site-controlled single-photon emission up to 150 K

Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe₂ operating at temperatures up to 150 K without plasmonic or optical cavities.

Kamyar Parto
Shaimaa I. Azzam
Galan Moody
ResearchOpen Access11 Jun 2021
Nature Communications

Volume: 12, P: 1-8
Unconventional critical behaviour in weak ferromagnets Fe_2-xMn_xCrAl (0 ≤ x < 1)

Kavita Yadav
Dheeraj Ranaut
K. Mukherjee
ResearchOpen Access21 Sept 2021
Scientific Reports

Volume: 11, P: 1-9
The future transistors

The challenges and opportunities for the design of field-effect transistors are discussed and a vision of future transistors and potential innovation opportunities is provided.

Wei Cao
Huiming Bu
Kaustav Banerjee
Reviews16 Aug 2023
Nature

Volume: 620, P: 501-515
Electrical contacts to two-dimensional semiconductors

This Review discusses the physics of electrical contacts to 2D semiconductors and the strategies adopted to improve charge injection in these materials. The requirements for efficient spin injection in spintronic devices are also presented.

Adrien Allain
Jiahao Kang
Andras Kis
Reviews20 Nov 2015
Nature Materials

Volume: 14, P: 1195-1205
A mode-balanced reconfigurable logic gate built in a van der Waals strata

Wei Cao
Jae Hwan Chu
Kaustav Banerjee
ResearchOpen Access16 Feb 2021
npj 2D Materials and Applications

Volume: 5, P: 1-7
Triptolide abrogates growth of colon cancer and induces cell cycle arrest by inhibiting transcriptional activation of E2F

Amanda R Oliveira
Georg Beyer
Vikas Dudeja
Research20 Apr 2015
Laboratory Investigation

Volume: 95, P: 648-659

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