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Showing 1–8 of 8 results
Advanced filters: Author: Lionel Kimerling Clear advanced filters
  • Nanophotonics has emerged as an exciting new arena concerned with the interaction of light with nanostructured materials. But if nanophotonics is to maximize its impact on the market and the next generation of technology, those within the field will need to form a cohesive plan.

    • Randolph Kirchain
    • Lionel Kimerling
    Comments & Opinion
    Nature Photonics
    Volume: 1, P: 303-305
  • A waveguide–integrated GeSi electro-absorption modulator on silicon with an ultra-low energy consumption of 50 fJ–1bit is presented. Operating in the spectral range of 1539—1553 nm, the CMOS–compatible device has an active area of 30 µm2 and is anticipated to be useful for future communication systems based on large–scale electronic–photonic integration on silicon.

    • Jifeng Liu
    • Mark Beals
    • Jurgen Michel
    Research
    Nature Photonics
    Volume: 2, P: 433-437
  • Scientists report the fabrication of a nonreciprocal optical resonator with a small length footprint of 290 µm on a silicon-on-insulator substrate. The device achieves unidirectional optical transmission with an isolation ratio of up to 19.5 dB near the telecommunications wavelength of 1,550 nm in a homogeneous external magnetic field.

    • Lei Bi
    • Juejun Hu
    • C. A. Ross
    Research
    Nature Photonics
    Volume: 5, P: 758-762
  • The automated packaging and assembly of a photonic chiplet to an optical interposer and printed circuit board is shown, where optical inter-chip couplers, wirebonds, and vias provide 3D waveguide connectivity.

    • Drew Weninger
    • Samuel Serna
    • Anuradha Agarwal
    ReviewsOpen Access
    Light: Science & Applications
    Volume: 15, P: 1-49
  • Owing to their excellent optoelectronic properties, Ge-on-Si photodetector can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and low-cost infrared imaging at low power consumption. This Review covers the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.

    • Jurgen Michel
    • Jifeng Liu
    • Lionel C. Kimerling
    Reviews
    Nature Photonics
    Volume: 4, P: 527-534