Layered thio- and seleno-phosphate ferroelectrics show promise for next-generation memory but have thermal stability issues. Using the electric field-driven phase transition in antiferroelectric CuCrP2S6, the authors introduce a robust memristor, emphasizing the potential of van der Waals antiferroelectrics in advanced neuromorphic computing.
- Yinchang Ma
- Yuan Yan
- Xixiang Zhang
