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Showing 1–10 of 10 results
Advanced filters: Author: Nicolas Ubrig Clear advanced filters
  • Here, the authors report the realization of light-emitting field-effect transistors based on van der Waals heterostructures with conduction and valence band edges at the Γ-point of the Brillouin zone, showing electrically tunable and material-dependent electroluminescence spectra at room temperature.

    • Hugo Henck
    • Diego Mauro
    • Alberto F. Morpurgo
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-8
  • Type-II van der Waals interfaces formed by different two-dimensional materials enable robust interlayer optical transitions, regardless of common issues such as lattice constant mismatch, layer misalignment or whether the constituent compounds are direct or indirect band semiconductors.

    • Nicolas Ubrig
    • Evgeniy Ponomarev
    • Alberto F. Morpurgo
    Research
    Nature Materials
    Volume: 19, P: 299-304
  • Many standard techniques for investigating magnetic properties in the bulk are ill suited to atomically thin van der Waals materials. Here, Wang et al take a prototypical van der Waals ferromagnet, Chromium Bromide, and show how tunneling conductance can elucidate the material magnetic properties.

    • Zhe Wang
    • Ignacio Gutiérrez-Lezama
    • Alberto F. Morpurgo
    ResearchOpen Access
    Nature Communications
    Volume: 12, P: 1-7
  • Van der Waals materials often exhibit different metastable structures, with the constituent layers shifted by small, atomic scale distances. If the material is magnetic, the resulting different layer stackings can cause drastic changes in magnetic ordering. Here, Yao et al. observe all three locally stable magnetic orderings predicted to occur in CrBr3 multilayers, two antiferromagnetic and one ferromagnetic.

    • Fengrui Yao
    • Volodymyr Multian
    • Alberto F. Morpurgo
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-10
  • Semimetallic WTe2 possesses very high magnetoresistance however conflicting pictures of the band structure responsible have emerged. Here, the authors find behaviour consistent with a model of two compensated electron and hold bands in exfoliated WTe2films with thicknesses down to the atomic scale.

    • Lin Wang
    • Ignacio Gutiérrez-Lezama
    • Alberto F. Morpurgo
    ResearchOpen Access
    Nature Communications
    Volume: 6, P: 1-7
  • Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple transitions to different magnetic states.

    • Zhe Wang
    • Ignacio Gutiérrez-Lezama
    • Alberto F. Morpurgo
    ResearchOpen Access
    Nature Communications
    Volume: 9, P: 1-8
  • Over the last decade, ionic gate spectroscopy has developed into a powerful technique to measure gaps and band offsets of atomically thin semiconductors. Here, we provide a detailed overview of the technique, discussing results obtained on different 2D semiconducting materials.

    • Ignacio Gutiérrez-Lezama
    • Nicolas Ubrig
    • Alberto F. Morpurgo
    Reviews
    Nature Reviews Physics
    Volume: 3, P: 508-519